We feel our methodology is valid for a good approximation of parameters because we utilize averages to help reduce the effects of variability. For more accurate numbers, the size of the data set should simply be increased.
The majority of our experimental values compare favorably by falling within the specified ranges. However, our k p value is surprisingly low, but not completely unreasonable. Figure 2. Comparison of NMOS characteristics. Figure 3. Comparison of PMOS characteristics. However, our PMOS data points, though correct in shape, appear to be offset from the theoretical simulation.
We believe that this is partly attributed to the fact that the vertical positioning of the curves is affected significantly by V T,p , and our SPICE and measured values are dissimilar. Using the same transistors we used in task 1, we experimentally determined the transfer characteristics of the CMOS inverter. Then we compared these values with theoretical values we derived and with SPICE model transfer characteristics. Here's out methodology for devising the theoretical transfer characteristics of the inverter.
Figure 4 shows the regions the inverter operates in, allowing us to plot V in vs V out. Figure 4. Inverter operation regions. We have. Notice that this region will be vertical since channel length modulation is ignored. Rewriting the equation in terms of V out , V in and V dd we get:. We have another quadratic equation; where. Notice that this time, the coefficient of is -1; the positive coefficient yields unrealistic results. The simulation is based off of the datasheet values of the transistors.
The plot can be seen in Figure 5. Here is the m-file we used. Figure 5. Inverter Transfer Characteristics. The theoretical, simulation, and experimental curves all seem to relate fairly well as we would hope. In this section we modeled basic logic gates using CMOS transistors. These logic functions are built from the basic inverter.
By inspection, this can be observed by looking at Figures 6a and 6b. The channel length modulation coefficients of both the transistors are non-zero. Suggested Test Series. Suggested Exams. More Electronic Devices Questions Q1. BC transistor is made by which material? The forward voltage drop of green colour LED is:. What does G stand for in the mobile technology range of 3G, 4G and 5G? The material which is not a semiconductor is. With increase in temperature, the electrical resistance of a semiconductor.
A device whose characteristics are very close to that of an ideal voltage source is a. Testbook Edu Solutions Pvt. Asked 9 years, 7 months ago. Active 1 year, 5 months ago.
Viewed 27k times. I used this formula's so far: The graphs are taken from the datasheet of Supertex VN10K Can someone please help me in the right direction? Am I doing anything wrong? Is it possible for delta to have a negative value? Here is a link to the datasheet: courses. Add a comment. Active Oldest Votes. Edit You can find a first approximation of Kn if you fix Vth at an arbitrary value possibly obtained from a measurement of your device.
Community Bot 1. I would like to upvote it, but I don't have any reputation Did I follow the correct steps in obtaining the values? Isn't Vgs th the threshold voltage?
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